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[Information] Shirutoku Report No. 12 #Types and Features of Diodes

[Information] Shirutoku Report No. 12 #Types and Features of Diodes

Efficient power supply using SiC devices! A brief introduction to the types and features of diodes.

★★Shirutoku Report: Useful Information You Should Know★★ By changing semiconductor materials from Si to SiC (silicon carbide), the breakdown voltage of Schottky Barrier Diodes (SBD) has improved, making them usable in DC/DC converters for PCS. While performance improves with SiC, cost issues had previously hindered its adoption. However, in the last year or two, cost challenges have been addressed, leading to increased opportunities for use. This report will briefly explain the types and characteristics of diodes. 【Contents】 ■ Types and Characteristics of Diodes *For more details, please refer to the PDF document or feel free to contact us.*

  • diode
  • power supply

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SiC Schottky barrier diode

SiC Schottky barrier diode

SiC Schottky barrier diode achieving low switching loss

We would like to introduce our "SiC Schottky Barrier Diode (SBD)." In addition to the product's feature of fast reverse recovery time (trr), it adopts a JBS (Junction Barrier Schottky) structure. We offer a 650V product that achieves low leakage current (Ir) and high surge current, which are required for switching power supplies. 【Features】 ■ High reverse voltage ■ Adoption of JBS (Junction Barrier Schottky) structure ■ A 650V product that achieves low leakage current (Ir) and high surge current required for switching power supplies *For more details, please refer to the PDF document or feel free to contact us.

  • diode

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Schottky barrier diode

Schottky barrier diode

For electric powertrains! Produced on a dedicated line at a domestic factory!

Our "Schottky Barrier Diodes" are utilized in DC/DC converters, contributing to the high efficiency of systems due to their ultra-low loss characteristics. The module packages are manufactured in our domestic automotive dedicated lines, featuring the highly reliable and proven "SOT-227" and "H-SOT". We have achieved a high level of customization capability to meet various customer demands. 【Features】 - Produced in domestic factory automotive dedicated lines - Supports high current - Low forward voltage drop - Lightweight and compact non-isolated transfer mold with small mounting space - Easy installation with screw type - Over 5 million units sold cumulatively as key components for automotive manufacturers for more than 10 years *For more details, please refer to the PDF materials or feel free to contact us.

  • diode

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Technical Data: Ultra-Low Loss Gallium Oxide Schottky Barrier Diode

Technical Data: Ultra-Low Loss Gallium Oxide Schottky Barrier Diode

We will advance the high current drive of the developed device and aim for commercialization starting in the fiscal year 2021.

This technical document covers the "Ultra-Low Loss Gallium Oxide Schottky Barrier Diode." Our company has successfully reduced forward loss by up to 40% compared to commercially available SiC Schottky diodes. We are advancing the development of high-current drive devices, aiming for commercialization starting in the fiscal year 2021. We also introduce the "Gallium Oxide Trench MOSFET." [Contents] ■ Ultra-Low Loss Gallium Oxide Schottky Barrier Diode ■ Gallium Oxide Trench MOSFET *For more details, please refer to the PDF document or feel free to contact us.

  • Other polymer materials

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SiC Schottky Barrier Diode "ICS Series"

SiC Schottky Barrier Diode "ICS Series"

Contributes to the high efficiency of power supplies through high current, high voltage characteristics, and fast recovery characteristics of SiC.

Our ICS series consists of Schottky barrier diodes made from SiC. By using SiC as the material, we achieve high current and high voltage characteristics that were not possible with silicon, while also maintaining the fast recovery characteristics of Schottky barrier diodes. By using them in power supply circuits for PFC (power factor correction circuits) and as freewheeling diodes in inverter circuits, we contribute to improving power supply efficiency and reducing excess power consumption during switching. Compared to fast recovery diodes known for their high-speed recovery characteristics, our products have achieved a 33.6% increase in efficiency and a 48.2% reduction in losses. Additionally, beyond improving power supply efficiency, our SiC Schottky barrier diodes offer advantages such as operation in high-temperature environments exceeding silicon and longer lifespan, so we encourage you to try our SiC Schottky barrier diodes.

  • diode

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